Metal-Assisted Catalytic Etching (MACE) for Nanofabrication of Semiconductor Powders

Electroless etching of semiconductors has been elevated to an advanced micromachining process by the addition a structured metal catalyst. Patterning catalyst lithographic techniques facilitated patterning crystalline and polycrystalline wafer substrates. Galvanic deposition metals on natural tendency produce nanoparticles rather than flat uniform films. This characteristic makes possible wafers particles with arbitrary shape size. While it widely recognized that spontaneous can be used in connection porosify wafers, is also produced nanostructured powders. Metal-assisted catalytic (MACE) controlled (1) etch track pores shapes sizes closely related size nanoparticle, (2) hierarchically porosified substrates exhibiting combinations large mesopores, (3) nanowires either solid or mesoporous cores. review discussed mechanisms porosification, processing advances, properties product special emphasis silicon